Posted on: March 13, 2025
Your responsibility will be to design and characterize InP-DHBT-based high-efficiency power amplifiers and low-noise amplifiers at sub-THz frequencies, in the D-band (~150 GHz) and H-band (~250 GHz) with performance surpassing that of state-of-the-art CMOS/SiGe BiCMOS based circuits. For this position you are supposed to work closely together with the technology provider, III-V Lab, and external research stays at III-V Lab are envisioned during the project period.
